[반도체] [솔루션]반도체물성과소자 semicondutor phsics and deviceDonald A. Neamen3판
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작성일 20-10-16 09:35
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Download : 반도체물성과소자.pdf
6 face atoms × ½ = 3 atoms
4
만약 내용이 다를시 해피래포트에 환불요청하시면 환불됩니다. = = r
3
b . x g
3
(c) Diamond: 8 corner atoms × 1/8 = 1 atom
4
3
4
16 2
2 atoms per cell, so atom vol. = F
3 πr
Ratio = 74%
솔루션,반도체,소자,3판,deviceDonald
(b) Face-centered cubic lattice
Ratio
3
2 2
Problem Solutions
3
a r 3
순서
4
100%
= × ⇒
[반도체] [솔루션]반도체물성과소자 semicondutor phsics and deviceDonald A. Neamen3판
565 10 8 3 b . x g
K J 1
(b)
8
= × ⇒
Density = ⇒
[이용대상] ㅇ
8 Ge atoms per unit cell
π
설명
1.1
1.3
4 As atoms per unit cell, so that
3
[솔루션]semicondutor phsics and deviceDonald A. Neamen3판 [참고자료] ㅇ [자료범위] ㅇ [이용대상] ㅇ
r
3
Density of As = − 2.22 1022 3 x cm
[참고자료(資料)] ㅇ
2
5 65 10 8 3
d = 4r = a 3 ⇒ a = r
Density of Ga = − 2.22 1022 3 x cm
r
Unit cell vol. = =F
IK J
Download : 반도체물성과소자.pdf( 19 )
IK J
4 atoms per cell, so atom vol. = F
4
Total of 4 atoms per unit cell
4
1 atom per cell, so atom vol. = ( )F
(a) fcc: 8 corner atoms × 1/8 = 1 atom
(b) bcc: 8 corner atoms × 1/8 = 1 atom
(a) Simple cubic lattice; a = 2r
Unit cell vol = a = ( r) = r 3 3 3 2 8
H
[자료(資料)범위] ㅇ
H G
Ratio = 52.4%
반도체물성과소자 입니다
(c) Body-centered cubic lattice
Density = ⇒
FH G
−
Ratio
[솔루션]semicondutor phsics and deviceDonald A. Neamen3판
Total of 8 atoms per unit cell
r
FH G
100%
Density of Ge = − 4.44 1022 3 x cm
IK J
(a) 4 Ga atoms per unit cell
4
−
Unit cell vol = a = r = r 3 3 3 c2 2 h 16 2
6 face atoms × ½ = 3 atoms
3 4
H G I
4
d = 4r = a 2 ⇒ a
1.2
레포트 > 공학,기술계열
3
r
3 πr
d
Then
[해법]semicondutor phsics and deviceDonald A. Neamen3판 입니다.
π
IK
3
4 enclosed atoms = 4 atoms
8
3
H G I
1 enclosed atom = 1 atom
Then
Total of 2 atoms per unit cell
다.
